Finite-ground microstrip line (FGMSL) open-end discontinuities are characterized via a self-calibrated method of moments (MoM) as a unified circuit model with a fringing capacitance and radiation conductance. By integrating the short-open calibration (SOC) procedure into a determinant MoM, the model parameters are extracted without needing the alternative port impedance. Regardless of non-ideal voltage sources, extracted parameters are observed to achieve a stable convergence as the feeding line is sufficiently extended. After extracted capacitance of a FGMSL open-end with equal strip and finite-ground widths are validated against its traditional MSL counterpart with infinite ground, extensive results are given to originally demonstrate that the capacitance increases as a decelerated function of the finite-ground width and length while the conductance is negligibly small as compared with its imaginary part.

A hybrid method-of-moments (MoM) and immittance approach for efficient and accurate analysis of printed slots and strips of arbitrary shape in layered waveguide for various applications has been proposed. An impedance-type MoM is formulated from the electric field integral equation (EFIE) for printed strip case and an admittance-type MoM is formulated from the magnetic field integral equation (MFIE) for the printed slot case, using the Galerkin's technique. Immittance approach has been used to calculate spectral dyadic Green's functions for the layered waveguide. For efficient analysis of large and complex structures, equivalent circuit parameters of a block are first extracted and complete structure is analyzed through cascaded ABCD matrices. The equivalent circuit characterization of printed strip and slot in layered waveguide has been done for the first time. Finite periodic structure loaded with printed strips has been investigated and it shows the electromagnetic bandgap (EBG) behavior. The electromagnetic (EM) program hence developed is checked for its numerical accuracy and efficiency with results generated with High-frequency structure simulator (HFSS) and shows good performance.

One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.

Field-theoretical equivalent circuit models of a variety of coplanar waveguide (CPW) lumped-element discontinuities for two dominant modes are characterized by executing the short-open calibration (SOC) procedure in the fullwave method of moments (MoM). In our developed MoM platform, the impressed current sources with even or odd symmetry are introduced at the selected ports in order to separately excite the even and odd dominant modes, i.e., CPW- and CSL-mode. After the port network parameters are numerically derived using the Galerkin's technique, the two SOC standards are defined and evaluated in the self-consistent MoM to effectively de-embed and extract the core model parameters of a CPW circuit or discontinuity. After the validation is confirmed via comparison with the published data, extensive investigation is carried out to for the first time demonstrate the distinctive model properties of one-port CPW short- and open-end elements as well as two-port inductive and capacitive coupling elements with resorting to its two different dominant modes.

In the FDTD simulation of microwave circuits, a device in very small size compared with the wavelength is often handled as a lumped element, but it may still occupy more than one cell instead of a wire structure without volume routinely employed in classical extended FDTD algorithms. In this paper, two modified extended FDTD algorithms incorporating a lumped element occupying more than one cell are developed directly from the integral form of Maxwell's equations based on the assumption whether displacement current exists inside the region where a device is present. If the displacement current exists, the modified extended FDTD algorithm can be represented as a Norton equivalent current-source circuit, or otherwise as a Thevenin equivalent voltage-source circuit. These algorithms are applied in the microwave line loaded by a lumped resistor and an active antenna to illustrated the efficiency and difference of the two algorithms.

This report describes a new methodology for the optimal placement of decoupling capacitors on the printed circuit board (PCB). This method searches the optimal position of decoupling capacitor so that the impedance characteristics at the power supply is minimized in the specified frequency range. In this method, the PCB is modeled by the PEEC method to handle the 3-dimensional structures and Krylov-subspace technique is applied to obtain efficiently the impedance characteristics in the frequency domain.

The efficiency and reliability of an ultrasonic motor, operating in longitudinal-torsional degenerate-mode, are investigated. It is essential to miniaturize both longitudinal and torsional mode piezoelectric ceramic elements, in order to produce low-cost ultrasonic motors, and to realize a motor with low battery power consumption. The ultrasonic motor is designed with an accurate mechanical equivalent circuit, which can produce high design precision notwithstanding low computation cost. It is important in this design that the resonant frequencies of longitudinal mode and torsional mode coincide with each other under the pertinent rotor pressing force and longitudinal and torsional mode piezoelectric ceramic elements are located in the vibration nodes for the longitudinal mode and the torsional mode, respectively. As a result, the fabricated motor, whose rotor diameter was 12 mm, produced 480 r.p.m. no-load revolution speed, 0.55 kgfcm maximum torque, 50% maximum efficiency, 2.5 W consumed power and a lifetime over 1000 hours with continuous rotation.

Recently, progress has been made in the area of electrical modeling of conductors embedded in arbitrary dielectrics using circuit oriented techniques. These models usually occur in conjunction with VLSI type circuits. Many different applications exist today for such models in the EMI, EIP (Electrical Interconnect and Package) analysis as well as for the microwave circuit area. Practical problems involve a multitude of hardware components and they demand a wide spectrum of both time as well as frequency domain solution techniques. In this paper we consider circuit oriented techniques for the solution of these problems. Specifically, we give an outline of the three dimensional Partial Element Equivalent Circuit (PEEC) full wave modeling approach and review the recent progress in this area.

When we use a telephone-handset, the frequency response of the telephone-earphone becomes degraded because of the leak through the slit between the ear and the earphone. Consequently, it is very important to establish the design method of the telephone-handset which reduces the effect of leak. No one has tried to design the telephone-handset to reduce the effect. We are the only ones to have proposed an automatic design method by nonlinear optimization techniques. However, this method gives only one set of the acoustic parameters aiming at a certain specific target frequency response, and therefore lacks flexibility in the actual design problem. On the other hand, the design method proposed in this paper, which uses Monte-Carlo method, gives an infinite number of sets of acoustic parameters that realize infinite frequency responses within the target allowable region. As these infinite number of sets become directly the design ranges of acoustic parameters, the proposed method has the flexibility that any set of the acoustic parameters belonging to the design ranges guarantees the corresponding response to be within the target allowable region, and at the same time reduces the effect of leak. This flexibility is advantageous to the actual design problem.

Interdigital transducers (IDTs) with leaky-SAWs propagating on 36 YX-LiTaO3, and 41 and 64 YX-LiNbO3 were theoretically analyzed, providing a new equivalent circuit. This equivalent circuit included attenuation constant due to leakage as well as conductance caused by bulkwave radiation. All circuit parameters were derived by solving integral equations. Fundamental experiments showed fairly good agreement between theoretical and experimental results, which gave very accurate design tools for leaky-SAW devices.

Wave digital filters are a class of digital filters. They are equivalent to commensurate transmission line circuits synthesized with uniform, lossless, and commensurated transmission lines. In order to extend their applications to physical wave phenomena including quantum electronics, it is necessary to consider a generalized distributed line whose velocity of energy flow has frequency characteristics. This paper discusses a generalized distributed circuit, and we obtain two types of lines, lossless and cut-off. In order to analyze these lines, we discuss signal flow graphs of steady state voltage and current. The reflection factors we obtain here are the same as that for an active power or a diagonal element of a scattering matrix, which is zero in conjugate matching. By using this reflection factor, we obtain band-pass filters synthesized with the cut-off lines. We also describe an analysis method for nonuniform line related to Riccati differential equation.

Noise characteristics of InAlAs/InGaAs HEMT's passivated by SiN are investigated to ascertain their suitability for practical applications in circuit such as MMIC's. A 0.18-µm-gate-length device with 125-µm-gate width and 8-gate fingers showed the lowest minimum noise figure of 0.43 dB at 26 GHz with an associated gain of 8.5 dB of any passivated device ever reported. This value is also comparable to the lowest reported minimum noise figure obtained by bare InAlAs/InGaAs HEMT's in spite of increased parasitic capacitances due to the SiN passivation. Thes excellent noise performance was achieved by employing non-alloyed ohmic contact, a T-shaped gate geometry and a multi-finger gate pattern. To reduce the contact resistance of the non-alloyed ohmic contact, a novel n+-InGaAs/n+-InAlAs cap layer was used resulting in a very low contact resistance of 0.09 Ωmm and a low sheet resistance for all layers of 145 Ω/sq. No increase in these resistances was observed after SiN passivation, and a very low source resistance of 0.16 Ωmm was obtained. An analysis of equivalent circuit parameters revealed that the T-shaped gate and multi-finger gate pattern drastically decrease gate resistance.